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InGaAs-GaAs-InGaP distributed feedback buried heterostructure strained quantum-well lasers for high-power operation at 0.98 mu m

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3 Author(s)
Sin, Y.K. ; Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan ; Horikawa, H. ; Kamijoh, T.

Data are presented on device results from InGaAs-GaAs distributed feedback buried heterostructure (DFB BH) strained-quantum-well lasers with InGaP cladding layers. DFB BH lasers with a p-n InGaP current blocking junction entirely grown by a three-step MOVPE on GaAs substrates show a low laser threshold of 3.2 mA and a high output power of 41 mW with single-longitudinal-mode operation, both measured CW at RT. The monomode oscillation is obtained even at the injection current of 140 mA (44 times the laser threshold) with the side-mode suppression ratio of 35 dB and the temperature sensitivity of Bragg modes being 0.5 AA/ degrees C measured between 20 and 40 degrees C.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:5 ,  Issue: 9 )