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Wideband and high-power compressively strained GaInAsP/InP multiple-quantum-well ridge waveguide lasers emitting at 1.3 mu m

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7 Author(s)
Fukushima, T. ; Furukawa Electr. Co. Ltd., Yokohama, Japan ; Matsumoto, N. ; Nakayama, H. ; Ikegami, Y.
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Compressively strained 1.3- mu m GaInAsP/InP multiple-quantum-well (MQW) ridge waveguide lasers were fabricated. Through optimizing the total well thickness, large bandwidth over 11 GHz was achieved, together with high quantum efficiency of about 0.48 W/A and high power output of 60 mW before rollover. The laser also showed less temperature sensitivity up to an elevated temperature of 85 degrees C.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:5 ,  Issue: 9 )