By Topic

SaPOSM: an optimization method applied to parameter extraction of MOSFET models

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Y. H. Hu ; Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA ; S. Pan

Points out that SaPOSM integrates an efficient deterministic optimization algorithm, called POSM, with the popular stochastic optimization paradigm simulated annealing (SA). It offers great promise for improving the optimization results significantly while using only a moderate amount of computing time. Tested on a suite of multi-minima optimization benchmark problems, SaPOSM's performance rivals a recently reported fast simulated diffusion method. SaPOSM was used to extract the parameters of state-of-the-art submicron (0.3-μm channel length) MOSFET transistors, and very favorable results have been obtained. For a second difficult parameter extraction problem (18 parameters, five different channel lengths), simulation results indicate that SaPOSM achieves performance comparable to the SA method. Specifically, both SA and SaPOSM are able to minimize the modeling error to several orders of magnitude smaller than that obtained using POSM alone. At the same time, the computing time taken by SaPOSM is only a very small fraction of that taken by the SA method

Published in:

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems  (Volume:12 ,  Issue: 10 )