By Topic

Improvements in dynamic and 1/f noise performances of GaAs MESFETs at cryogenic temperatures by using a monolithic process

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Camin, D.V. ; Dipartimento di Fisica, Milano Univ., Italy ; Pessina, G. ; Previtali, E.

A monolithic array of MESFETs with progressively increasing gate lengths from 1 μm to 10 μm and two charge preamplifiers has been designed and integrated in the same chip. Low-frequency noise and dynamic characteristics of the FETs are measured. Results show that D-FETs of the QED/A process by TriQuint present good dynamic performances and low noise at cryogenic temperatures when the gate length has an optimum value. The preamplifier shows very low power dissipation, fast response, and reasonable noise performance in spite of the use of M-FETs which do not exhibit the best noise performance for the process

Published in:

Nuclear Science, IEEE Transactions on  (Volume:40 ,  Issue: 4 )