Close category search window
 

Signal simulations for double-sided silicon strip detectors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Leslie, J. ; Santa Cruz Inst. for Particle Phys., California Univ., CA, USA ; Seiden, A. ; Unno, Y.

Signals resulting from the passage of minimum ionizing charged particles through double sided Si strip detectors detectors are simulated, including the effects of Landau fluctuations and the drift of electrons and holes in the electric and magnetic fields inside the detector. Induced currents are integrated, shaped and discriminated after addition of random electrical noise, and the timing of signals is obtained. Using the results of many Monte Carlo generated events, efficiencies, position resolutions, and means are evaluated as functions of the threshold, signal-to-noise ratio, amplifier shaping time, and data storage time-window

Published in:
Nuclear Science, IEEE Transactions on  (Volume:40 ,  Issue: 4 )

Date of Publication: Aug 1993

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.