Referenced Items are not available for this document.
A process for the fabrication of CMOS transistors with oxide-isolated source-drain regions that are coplanar with the device channel region is described. The process uses the epitaxial lateral overgrowth technique to selectively grow single-crystal silicon from seed regions that will become the transistor channel regions. The source-drain regions are polycrystalline silicon and are deposited following the selective growth. n- and p-channel device characteristics are presented
Published in:
Electron Devices, IEEE Transactions on
(Volume:35
,
Issue:
8
)
Date of Publication: Aug 1988
- Page(s):
- 1382 - 1383
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 3232570
- Digital Object Identifier :
- 10.1109/16.2563
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Aug 1988
- Sponsored by :
- IEEE Electron Devices Society
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