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High performance InGaAs/GaAlAs laser diodes for electronic/photonic integrated circuit applications

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4 Author(s)
Ou, S.S. ; TRW Res. Center, Redondo Beach, CA, USA ; Yang, J.J. ; Hess, C. ; Jansen, M.

High-performance, short-cavity, strained-layer InGaAs/GAlAs laser diodes that are suitable for two-dimensional electronic-photonic integrated circuit (EPIC) applications have been demonstrated. Continuous-wave threshold currents as low as 4 mA, and singlemode output powers in excess of 100 mW (maximum output power: 120 mW) were achieved for as-cleaved, reactive-ion-etched, 3.5 mu m-wide, 200 mu m-long, InGaAs/GaAlAs ridge-waveguide laser diodes in the junction-side up configuration.

Published in:

Electronics Letters  (Volume:29 ,  Issue: 6 )