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Room-temperature CW operation of 610 nm band AlGaInP strained multiquantum well laser diodes with multiquantum barrier

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6 Author(s)
Hamada, H. ; Sanyo Electric Co. Ltd., Osaka, Japan ; Tominaga, K. ; Shono, M. ; Honda, S.
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610 nm band AlGaInP compressively strained multiquantum-well laser diodes with a multiquantum barrier have been successfully fabricated by MOCVD using

Published in:

Electronics Letters  (Volume:28 ,  Issue: 19 )