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Low threshold current, high output power buried heterostructure MQW lasers with strained InGaAsP wells

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2 Author(s)

Buried heterostructure lasers with 4, 8 and 16 compressively strained InGaAsP quantum wells have been fabricated. A record low threshold current of 3.1 mA has been obtained and thresholds for all devices are lower than for lasers with wells of compressively strained or lattice-matched InxGa1-xAs. High output powers of over 60 mW per facet have been measured.

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Electronics Letters  (Volume:28 ,  Issue: 19 )