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Browse Journals & Magazines > Electronics Letters ...> Volume:28 Issue:19 Help

Low threshold current, high output power buried heterostructure MQW lasers with strained InGaAsP wells

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3 Author(s)
Seltzer, C.P. ; British Telecom Labs., Ipswich, UK ; Perrin, S.D. ; Spurdens, P.C.

Buried heterostructure lasers with 4, 8 and 16 compressively strained InGaAsP quantum wells have been fabricated. A record low threshold current of 3.1 mA has been obtained and thresholds for all devices are lower than for lasers with wells of compressively strained or lattice-matched InxGa1-xAs. High output powers of over 60 mW per facet have been measured.

Published in:
Electronics Letters  (Volume:28 ,  Issue: 19 )

Date of Publication: 10 Sept. 1992

Page(s):
1819 - 1821
ISSN :
0013-5194
INSPEC Accession Number:
4266417
Digital Object Identifier :
10.1049/el:19921160
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
10 Sept. 1992
Sponsored by :
Institution of Engineering and Technology

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