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Low threshold current density 1.5 mu m (In, Ga, Al)As quantum well lasers grown by MBE

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2 Author(s)

The use of strained ternary and quaternary (In, Ga, Al) quantum wells for the active regions in MBE grown 1.5 mu m lasers has been compared. Threshold current densities as low as 530 A/cm2 were obtained using compressively strained (In, Ga, Al)As quaternary quantum wells with waveguide losses of 9.4 cm-1 and a current injection efficiency of 83 %. These results represent the best (Al, Ga, In)As/InP quantum well lasers grown by MBE.

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Electronics Letters  (Volume:28 ,  Issue: 15 )