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Strained p-channel InGaSb/AlGaSb modulation-doped field-effect transistors

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3 Author(s)
Lott, J.A. ; Sandia Nat. Labs., Albuquerque, NM, USA ; Klem, J.F. ; Wendt, J.R.

Strained In0.25Ga0.75Sb p-channel modulation-doped field-effect transistors with Al0.75Ga0.25Sb Be-doped barrier layers are demonstrated. The extrinsic normalised transconductances for 1.2 mu m gate length devices range from 33 to 51 mS/mm at 300 K and from 132 to 161 mS/mm at 77 K. At 300 K, the devices operated in depletion mode with a threshold voltage of approximately 0.3 V, a normalised output conductance of less than 3mS/mm, and maximum drain current densities of approximately 20mA/mm. The devices show promise for complementary heterojunction field-effect transistor logic applications.

Published in:

Electronics Letters  (Volume:28 ,  Issue: 15 )

Date of Publication:

16 July 1992

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