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Low threshold InGaAs strained quantum well laser with lateral npn current blocking structure grown by molecular beam epitaxy

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3 Author(s)
Takamori, T. ; Okl Electr. Ind. Co. Ltd., Tokyo, Japan ; Watanabe, K. ; Kamijoh, T.

A sophisticated current confinement structure using the amphoteric nature of MBE grown Si-doped GaAs and AlGaAs is demonstrated for an index-guided InGaAs strained quantum well laser. Lateral and vertical npn current blocking layers were formed for the first time by a self aligned process. Devices showed threshold current of 10 mA and total slope efficiency of 0.56 under room temperature CW operation.

Published in:

Electronics Letters  (Volume:28 ,  Issue: 15 )

Date of Publication:

16 July 1992

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