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Generalised stable bidirectional associative memory

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3 Author(s)
Jeng, Y.-J. ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Yeh, C.-C. ; Chiueh, T.-D.

A general correlation model of the bidirectional associative memory (BAM) is proposed. A sufficient condition for bidirectional stability of the general model by using a system energy (Lyapunov) function is derived. Based on the general model, a stable high order BAM model is described as an example and simulated for the performance of storage capacity.

Published in:

Electronics Letters  (Volume:28 ,  Issue: 15 )