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Enhanced exciton absorption in quantum-confined Stark effect of [110]-oriented InGaAsP quantum wells

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4 Author(s)
Oe, K. ; Opto-Electron. Labs., Kanagawa, Japan ; Wakita, K. ; Bhat, R. ; Koza, M.A.

A new phenomenon of the quantum-confined Stark effect has been found in InGaAsP quantum wells grown on [110]InP substrates by MOVPE. Enhanced exciton absorption concurrent with the applied voltage is observed for the first time.

Published in:

Electronics Letters  (Volume:28 ,  Issue: 15 )