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Modulation bandwidth enhancement of all-optical modulators based on photo-induced intersub-band absorption in GaAs/AlGaAs quantum wells by proton bombardment

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4 Author(s)

All-optical modulators at 10 mu m based on photo-induced intersub-band absorption in multiquantum wells can exhibit very large extinction ratios. However, the frequency response of such modulators is imposed by the electronic band-to-band recombination processes which usually limit the bandwidth to a few tens of megahertz. The authors show that the modulation bandwidth can be substantially improved by proton bombardment of the multiquantum wells. The results of experiments on a 250 period GaAs/Al0.25Ga0.75As quantum well structure agree closely with calculations. Modulation bandwidths larger than 200 MHz appear feasible with implantation doses less than 1013cm-2.

Published in:

Electronics Letters  (Volume:28 ,  Issue: 15 )