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Pulsed and CW high temperature operation of InGaAs/GaAs strained layer vertical cavity surface emitting lasers

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6 Author(s)

The performance of strained layer InGaAs/GaAs vertical cavity surface emitting lasers defined by ion implantation over a approximately 75 degrees C temperature range is reported on. Maximum CW output levels for the temperature extremes of 10 and 86 degrees C are 7.5 MW and 200 mu W, respectively for 20*20 mu m2 devices. The temperature dependence of the CW threshold current exhibits exponential behaviour to 80 degrees C.

Published in:

Electronics Letters  (Volume:28 ,  Issue: 1 )

Date of Publication:

2 Jan. 1992

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