By Topic

The GE high density overlay MCM interconnect method solves high power needs of GaAs system design

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Gdula, M. ; GE, Schenectady, NY, USA ; Yerman, A. ; Krishnamurthy, V. ; Fillion, R.

As electronic systems signals and clock rates exceed 100 MHz, designers must consider the use of emerging high performance digital GaAs chip technology. Because GaAs parts do not yield at the high rates of more mature silicon technology devices, it is presently infeasible to build monolithic wafer scale integration (WSI) with GaAs technology. A hybrid wafer scale integration (HWSI) approach has been developed to overcome the limits of monolithic approaches, including the ability to provide for multichip module (MCM) process optimizations serving low IR loss requirements for power delivery, and use of overlay interconnect, first placing the chip into a structure for the most advantageous thermal management.

Published in:

Wafer Scale Integration, 1993. Proceedings., Fifth Annual IEEE International Conference on

Date of Conference:

1993