By Topic

Radiation response of CMOS/SOI devices formed by wafer bond and etchback

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
L. J. Palkuti ; ARACOR, Sunnyvale, CA, USA ; P. Ling ; P. Leonov ; H. Kawayoshi
more authors

The fabrication process and defect characteristics of thin-film silicon-on-insulator (SOI) devices prepared by the bond and etchback process (BESOI) utilizing diamond matching and noncontact polishing were studied. MOS devices were fabricated and were characterized electrically before and after radiation exposure. Analysis by TEM shows that a defect-free film is produced by the BESOI process. CMOS devices show high mobility and low leakage current (less than 1.0 pA/μm). The radiation responses of the top and edge oxide are comparable to those of bulk devices. Positive charge trapping and interface-trap generation were -0.8 and 0.8 V, respectively, at a dose of 10 Mrad (SiO2)

Published in:

IEEE Transactions on Nuclear Science  (Volume:35 ,  Issue: 6 )