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Lateral charge transport from heavy-ion tracks in integrated circuit chips

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3 Author(s)
Zoutendyk, J.A. ; Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA ; Schwartz, H.R. ; Nevill, L.R.

A 256 K DRAM has been used to study the lateral transport of charge (electron-hole pairs) induced by direct ionization from heavy-ion tracks in an IC. The qualitative charge transport has been simulated using a 2-D numerical code in cylindrical coordinates. The experimental bit-map data clearly show the manifestation of lateral charge transport in the creation of adjacent multiple-bit errors from a single heavy-ion track. The heavy-ion data further demonstrate the occurrence of multiple-bit errors from single ion tracks with sufficient stopping power. The qualitative numerical simulation results suggest that electric-field-funnel-aided (drift) collection accounts for single error generated by an ion passing through a charge-collecting junction, while multiple errors from a single ion track are due to lateral diffusion of ion-generated charge. A quantitative analysis of this effect would require that the simulation be extended to adjacent devices and would therefore require a 3-D numerical code in Cartesian coordinates

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Nuclear Science, IEEE Transactions on  (Volume:35 ,  Issue: 6 )