By Topic

Comparison of threshold transient upset levels induced by flash X-rays and pulsed lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
W. D. Raburn ; Univ. of South Alabama, Mobile, AL, USA ; S. P. Buchner ; K. Kang ; R. Singh
more authors

The use of pulsed laser testing as a method of evaluating the transient-radiation upset thresholds of integrated circuits is discussed. By comparing upset levels using a pulsed laser with those obtained using a flash X-ray that has long been an accepted transient-radiation simulator, it is shown that the laser can be used as a reliable source for 100% screening and also as an efficient development tool. Differences in the responses of the two sources are pointed out, and it is shown that upset levels of CMOS SRAMs using the two sources are in good agreement when these factors are taken into account. Results for both wafer level and packaged parts testing are presented

Published in:

IEEE Transactions on Nuclear Science  (Volume:35 ,  Issue: 6 )