Radiation-hard static induction transistor

The design, fabrication, and characteristics of a 350-V, 100-A buried-gate static induction transistor (SIT) as a power switching device for applications in military and space environments because of its potential for radiation hardness, high-frequency operation, and the incorporation of on-chip smart power sensor and logic functions are described. The potential radiation hardness of this class of devices was evaluated by measurement of SIT characteristics after irradiation with 100-Mrad (2-MeV) electrons and up to 10/sup 16/ fission neutrons/cm/sup 2/. High-temperature operation and the possibility of radiation damage self-annealing are discussed.<
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