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Radiation-hard static induction transistor

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5 Author(s)
M. H. Hanes ; Westinghouse Res. & Dev. Center, Pittsburgh, PA, USA ; J. Bartko ; J. -M. Hwang ; P. Rai-Choudhury
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The design, fabrication, and characteristics of a 350-V, 100-A buried-gate static induction transistor (SIT) as a power switching device for applications in military and space environments because of its potential for radiation hardness, high-frequency operation, and the incorporation of on-chip smart power sensor and logic functions are described. The potential radiation hardness of this class of devices was evaluated by measurement of SIT characteristics after irradiation with 100-Mrad (2-MeV) electrons and up to 1016 fission neutrons/cm 2. High-temperature operation and the possibility of radiation damage self-annealing are discussed

Published in:

IEEE Transactions on Nuclear Science  (Volume:35 ,  Issue: 6 )