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Comparison of the degradation effects of heavy ion, electron, and cobalt-60 irradiation in an advanced bipolar process

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3 Author(s)
J. A. Zoutendyk ; Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA ; C. A. Goben ; D. F. Berndt

Experimental measurements are reported of the degradation effects of high-energy particles (heavy ion (Br) and electron) and Co-60 gamma-rays on the current gain of minimum-geometry bipolar transistors made from an advanced process. The data clearly illustrate the total-ionizing-dose/particle-fluence behavior of this bipolar transistor produced by an advanced process. In particular, bulk damage from Co-60 gamma rays in bipolar transistors (base transport factor degradation) and surface damage in bipolar transistors from ionizing radiation (emitter-efficiency degradation) have been observed. The true equivalence between various types of radiation for this process technology has been determined on the basis of damage from the log[K1] intercepts

Published in:

IEEE Transactions on Nuclear Science  (Volume:35 ,  Issue: 6 )