By Topic

Theoretical studies of electronic conduction and optical generation mechanisms in the double-heterostructure optoelectronic switch (DOES)

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Simmonds, J.G. ; Dept. of Electr. Eng., Bradford Univ., UK ; Taylor, G.W.

The effects of other physical properties on the electrical and optical properties of the double-heterostructure optoelectronic switch device are calculated. The device is similar to an earlier version, but the charge sheet responsible for the unique electrical and optical switching properties of the device is placed in the wide-bandgap barrier layer rather than in the narrow-bandgap active layer. This generally improves the overall operating characteristics of the device because in principle it allows higher charge sheet doping values. This is possible because the charge sheet remains ionized even for very high inversion channel densities

Published in:

Electron Devices, IEEE Transactions on  (Volume:35 ,  Issue: 8 )