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Interface-state measurement on SOS using the charge-pumping technique on gated-diode test structures

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1 Author(s)
A. T. Dejenfelt ; Dept. of Solid State Electron., Chalmers Univ. of Technol., Goteborg, Sweden

The radiation-induced interface-state density in CMOS/SOS was measured with the charge-pumping technique using a gated-diode test structure. The results were compared to the interface-state density measured with the subthreshold slope method in n- and p- channel MOSFET devices after exposure to Co-60 radiation. Experimental results using the two methods on both depleted and nondepleted SOS-substrates were analyzed. With a combination of both methods, the interface-state density at the Si-sapphire interface was 1.3×1012 cm -2 eV-1. A direct method of measuring the interface-state density at the interface to the substrate isolation oxide using a charge-pumping technique is described. The test structures can be implemented in a standard CMOS/SOS test die

Published in:

IEEE Transactions on Nuclear Science  (Volume:35 ,  Issue: 6 )