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The application of deep level transient spectroscopy to the measurement of radiation-induced interface state spectra

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3 Author(s)
C. Barnes ; Aerosp. Corp., Los Angeles, CA, USA ; T. Zietlow ; K. Nakamura

The technique of constant capacitance, deep level transient spectroscopy (CC-DLTS) was used to measure the energy distribution of the Co-60-induced interface-state concentration, D, in MOS capacitors fabricated on both p- and n-type Si. In the Sandia baseline and Mod B test chips examined, D depends on the bias during irradiation and the postirradiation anneal. Annealing at 80°C causes the growth of deep states centered near 0.4 eV below the conduction band in n-type samples. For p-type Si, the postanneal spectrum is dominated by shallow interface states

Published in:

IEEE Transactions on Nuclear Science  (Volume:35 ,  Issue: 6 )