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Rapid thermal processing for reproducible formation of the self-aligned silicides of cobalt and platinum

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1 Author(s)
Murarka, Shyam P. ; Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA

The results of a continued investigation of the formation of self-aligned CoSi2 and PtSi are presented. In both cases it is found that simple surface cleaning methods and use of rapid thermal annealing in inert ambients lead to a method of forming these silicides that is reproducible and reliable. The effect of dopants in silicon or polysilicon on such process has also been investigated. These results are described and compared with the available information on the TiSi 2 process

Published in:

Advanced Semiconductor Manufacturing Conference and Workshop, 1992. ASMC 92 Proceedings. IEEE/SEMI 1992

Date of Conference:

30 Sep-1 Oct 1992