Cart (Loading....) | Create Account
Close category search window

Long-wavelength strained-layer InAs/GaInAs single-quantum-well laser grown by molecular beam epitaxy on InP substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Tournie, E. ; Max Planck Inst. fur Festkorperforschung, Stuttgart, Germany ; Grunberg, P. ; Fouillant, C. ; Kadret, S.
more authors

Laser emission is reported for the first time from a 10 monolayer-wide highly strained (3.2%) InAs single quantum well confined by Ga0.47In0.53As layers. At 80 K the emission spectrum of broad-area laser diodes is centred at 1.836 mu m, the threshold current-density is approximately 500 A/cm2 and the characteristic temperature is T0 approximately=30 K. CW operation is achieved up to 110 K with narrow-stripe devices but at shorter wavelength, due to increased losses and filling of the quantum-well energy levels.

Published in:

Electronics Letters  (Volume:29 ,  Issue: 14 )

Date of Publication:

8 July 1993

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.