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Long-wavelength strained-layer InAs/GaInAs single-quantum-well laser grown by molecular beam epitaxy on InP substrate

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9 Author(s)
Tournie, E. ; Max Planck Inst. fur Festkorperforschung, Stuttgart, Germany ; Grunberg, P. ; Fouillant, C. ; Kadret, S.
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Laser emission is reported for the first time from a 10 monolayer-wide highly strained (3.2%) InAs single quantum well confined by Ga0.47In0.53As layers. At 80 K the emission spectrum of broad-area laser diodes is centred at 1.836 mu m, the threshold current-density is approximately 500 A/cm2 and the characteristic temperature is T0 approximately=30 K. CW operation is achieved up to 110 K with narrow-stripe devices but at shorter wavelength, due to increased losses and filling of the quantum-well energy levels.

Published in:

Electronics Letters  (Volume:29 ,  Issue: 14 )

Date of Publication:

8 July 1993

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