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Improved equivalent circuit for determination of MESFET and HEMT parasitic capacitances from "Coldfet" measurements

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2 Author(s)
white, Paul M. ; Equipment Dev. Labs., Raytheon Co., Wayland, MA, USA ; Healy, R.M.

An improved equivalent circuit for MESFET and HEMT devices under zero drain bias pinched-off conditions is proposed. Parasitic gate and drain capacitances evaluated from low-frequency Y parameters using this circuit are approximately equal under conditions where equality would be expected from bond pad geometry considerations. In contrast, the previously used circuit considerably overestimates parasitic drain capacitance.<>

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:3 ,  Issue: 12 )