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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:35 Issue:5 Help

Analysis of the field effect in a metal-oxide-small-grain polysilicon structure-experimentation and modeling

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4 Author(s)
Lhermite, H. ; Dept. Materiaux et Composants, Rennes I Univ., France ; Bonnaud, O. ; Colin, Y. ; Rouffet, A.M.

An analysis of the field effect on small-grained (500-A) thin polysilicon film is carried out to predict the electrical behavior of metal-oxide-polysilicon structures, which depends on the grain size, the doping concentration of the polysilicon layer, and the trap densities at the grain boundaries. A one-dimensional model that is based on the exact numerical solution of Poisson's equation, which takes into account all of these parameters, is developed. Good agreement between experimental and calculated C(V) curves is found

Published in:
Electron Devices, IEEE Transactions on  (Volume:35 ,  Issue: 5 )

Date of Publication: May 1988

Page(s):
675 - 683
ISSN :
0018-9383
INSPEC Accession Number:
3190716
Digital Object Identifier :
10.1109/16.2512
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
May 1988
Sponsored by :
IEEE Electron Devices Society

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