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Carrier-induced energy shift in GaAs/AlGaAs multiple quantum well laser diodes

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3 Author(s)
Chen, P.A. ; Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Juang, C. ; Chang, C.Y.

Emission energy shift due to high carrier density at threshold in multiple quantum well (MQW) laser diodes is investigated theoretically. This energy shift is evaluated through the Schrodinger and the Poisson equations self-consistently as well as the calculation of the gain spectra with carrier-dependent lifetime broadening. The band filling and the gain broadening effects show a blue shift on the emission energy. Larger number of wells, lower barrier height, or wider well thickness, reduces the blue shift dependence on the carrier density. At high injections, this blue shift is offset by the bandgap shrinkage effect, which displays smaller influence on MQW's. While the carrier density is further increased, the transition due to the second quantized state is found in single quantum wells, however it is difficult to be observed in MQW's

Published in:

Quantum Electronics, IEEE Journal of  (Volume:29 ,  Issue: 10 )

Date of Publication:

Oct 1993

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