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Browse Journals & Magazines > Electronics Letters ...> Volume:29 Issue:5 Help

Frequency dispersion of transconductance and output resistance in GaAs MESFETs with low-temperature-grown GaAs passivation layers

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5 Author(s)
Chen, C.L. ; MIT, Cambridge, MA, USA ; Smith, F.W. ; Mahoney, L.J. ; Manfra, M.J.
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High-resistivity GaAs grown at low temperatures by molecular beam epitaxy was used as the surface passivation layer of MESFETs. When these MESFETs are biased in the saturation region, the frequency dispersions of the transconductance and output resistance are reduced compared to those of a MESFET without a passivation layer.

Published in:
Electronics Letters  (Volume:29 ,  Issue: 5 )

Date of Publication: 4 March 1993

Page(s):
499 - 501
ISSN :
0013-5194
INSPEC Accession Number:
4383845
Digital Object Identifier :
10.1049/el:19930334
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
4 March 1993
Sponsored by :
Institution of Engineering and Technology

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