Cart (Loading....) | Create Account
Close category search window

p-type SiGe channel modulation doped field-effect transistors with post-evaporation patterned submicrometre Schottky gates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Konig, U. ; Daimler Benz Res. Center, Ulm, Germany ; Schaffler, F.

Schottky gate biased p-type MODFETs with an Si0.65Ge0.35 channel are presented. A wet-chemical post-evaporation procedure of the Schottky gates allows the reduction of the gate length LG to submicrometre dimensions (0.5 mu m). The gate length dependence of the transconductance gme and gmi is reported. Maximum values are 37 or 103 mS/mm at 300 or 77 K. The devices work in the enhancement mode.

Published in:

Electronics Letters  (Volume:29 ,  Issue: 5 )

Date of Publication:

4 March 1993

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.