Referenced Items are not available for this document.
Schottky gate biased p-type MODFETs with an Si0.65Ge0.35 channel are presented. A wet-chemical post-evaporation procedure of the Schottky gates allows the reduction of the gate length LG to submicrometre dimensions (0.5 mu m). The gate length dependence of the transconductance gme and gmi is reported. Maximum values are 37 or 103 mS/mm at 300 or 77 K. The devices work in the enhancement mode.
Published in:
Electronics Letters
(Volume:29
,
Issue:
5
)
Date of Publication: 4 March 1993
- Page(s):
- 486 - 488
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 4383836
- Digital Object Identifier :
- 10.1049/el:19930325
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 4 March 1993
- Sponsored by :
- Institution of Engineering and Technology
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
