Referenced Items are not available for this document.
Silicon nitride deposited by electron-cyclotron resonance has been used to fully passivate InAlAs/InGaAs HFETs. The passivation process did not increase the gate leakage current, and passivated 1 mu m HFETs had a breakdown voltage of 15 V. These results illustrate the potential of ECR nitride for passivation of InP-based semiconductor devices.
Published in:
Electronics Letters
(Volume:29
,
Issue:
5
)
Date of Publication: 4 March 1993
- Page(s):
- 472 - 474
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 4392197
- Digital Object Identifier :
- 10.1049/el:19930316
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 4 March 1993
- Sponsored by :
- Institution of Engineering and Technology
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