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Damage-free passivation of InAlAs/InGaAs HFETs by use of ECR-deposited SiN

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4 Author(s)

Silicon nitride deposited by electron-cyclotron resonance has been used to fully passivate InAlAs/InGaAs HFETs. The passivation process did not increase the gate leakage current, and passivated 1 mu m HFETs had a breakdown voltage of 15 V. These results illustrate the potential of ECR nitride for passivation of InP-based semiconductor devices.

Published in:

Electronics Letters  (Volume:29 ,  Issue: 5 )

Date of Publication:

4 March 1993

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