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Numerical analysis of electric field profiles in high-voltage GaAs photoconductive switches and comparison to experiment

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2 Author(s)
Kingsley, L.E. ; Pulse Power Center, US Army Res. Lab., Fort Monmouth, NJ, USA ; Donaldson, W.R.

The electric field in GaAs photoconductive switches has been observed with an ultrafast electro-optic imaging system to develop complex spatial and temporal structure immediately after illumination. High-field domains form at the switch cathode as the photogenerated carriers recombine for bias fields above ~10 kV/cm. At these biases, the switch also remained conductive for a much longer time (~100 ns) than the material recombination time (~1 ns). A model which includes field-dependent mobility was developed to explain this data. Simulation of the electric field profile across the switch indicates that high-field domains which form at the switch cathode are the result of negative differential resistance

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Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 12 )