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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:40 Issue:12 Help

The effects of H2-O2-plasma treatment on the characteristics of polysilicon thin-film transistors

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3 Author(s)
Horng Nan Chern ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Chung Len Lee ; Tan Fu Lei

The effects of H2-plasma followed by O2-plasma treatment on n-channel polysilicon thin-film transistors (TFTs) were investigated. It was found that the H2-O2-plasma treatment is more effective in passivating the trap states of polysilicon films than the H2-plasma or O2-plasma treatment only. Hence, it is more effective in improving the device performance with regard to subthreshold swing, carrier mobility, and the current ON/OFF ratio. It is also found that thermal annealing of plasma-treated devices increases the deep states but has no effect on the tail states of the devices

Published in:
Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 12 )

Date of Publication: Dec 1993

Page(s):
2301 - 2306
ISSN :
0018-9383
INSPEC Accession Number:
4632723
Digital Object Identifier :
10.1109/16.249479
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Dec 1993
Sponsored by :
IEEE Electron Devices Society

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