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Design modeling of high-efficiency p+-n indium phosphide solar cells

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2 Author(s)
Jain, R.K. ; NASA Lewis Res. Center, Cleveland, OH, USA ; Flood, D.J.

A parametric study of p+-n indium phosphide solar cells has been conducted using the PC-1D computer program. The effect of base doping on cell efficiency has been studied, and it is found that cell efficiency is a maximum for impurity concentrations around 1017 cm-3. The variation of minority-carrier diffusion length as a function of base doping has been included. Using realistic values of electronic and material parameters, cell efficiencies in excess of 24% AM0 (25°C) are predicted

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Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 1 )