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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:40 Issue:1 Help

Lateral profiling of oxide charge and interface traps near MOSFET junctions

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3 Author(s)
Chen, W. ; Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA ; Balasinski, A. ; Ma, T.-P.

A technique for measuring the lateral distributions of both interface traps and trapped oxide charge near the source/drain junctions in MOSFETs is presented in detail. This technique derives from the charge pumping method, is easy to implement, and allows ready separation of the interface-trap and oxide charge components. Some illustrative results are given. The various issues involved in its implementation and its practical limitations are discussed

Published in:
Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 1 )

Date of Publication: Jan 1993

Page(s):
187 - 196
ISSN :
0018-9383
INSPEC Accession Number:
4344110
Digital Object Identifier :
10.1109/16.249443
Date of Current Version :
06 August 2002
Issue Date :
Jan 1993
Sponsored by :
IEEE Electron Devices Society

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