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Lateral profiling of oxide charge and interface traps near MOSFET junctions

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3 Author(s)
Chen, W. ; Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA ; Balasinski, A. ; Ma, T.-P.

A technique for measuring the lateral distributions of both interface traps and trapped oxide charge near the source/drain junctions in MOSFETs is presented in detail. This technique derives from the charge pumping method, is easy to implement, and allows ready separation of the interface-trap and oxide charge components. Some illustrative results are given. The various issues involved in its implementation and its practical limitations are discussed

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Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 1 )