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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:40 Issue:1 Help

High-mobility poly-Si thin-film transistors fabricated by a novel excimer laser crystallization method

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3 Author(s)
Shimizu, K. ; Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan ; Sugiura, O. ; Matsumura, Masakiyo

High-mobility poly-Si thin-film transistors (TFTs) were fabricated by a novel excimer laser crystallization method based on dual-beam irradiation. The new method can reduce the solidification velocity of the top Si layer by heating the bottom Si layer of the Si/SiO2/Si/glass substrate structure by means of laser irradiation not only from the front side but also from the back side. The grain size of poly-Si film was enlarged up to 2 μm. The field-effect mobilities of the TFT exceeded 380 cm2/V-s for electrons and 100 cm2/V-s for holes

Published in:
Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 1 )

Date of Publication: Jan 1993

Page(s):
112 - 117
ISSN :
0018-9383
INSPEC Accession Number:
4389161
Digital Object Identifier :
10.1109/16.249432
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Jan 1993
Sponsored by :
IEEE Electron Devices Society

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