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High-mobility poly-Si thin-film transistors fabricated by a novel excimer laser crystallization method

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3 Author(s)
K. Shimizu ; Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan ; O. Sugiura ; M. Matsumura

High-mobility poly-Si thin-film transistors (TFTs) were fabricated by a novel excimer laser crystallization method based on dual-beam irradiation. The new method can reduce the solidification velocity of the top Si layer by heating the bottom Si layer of the Si/SiO2/Si/glass substrate structure by means of laser irradiation not only from the front side but also from the back side. The grain size of poly-Si film was enlarged up to 2 μm. The field-effect mobilities of the TFT exceeded 380 cm2/V-s for electrons and 100 cm2/V-s for holes

Published in:

IEEE Transactions on Electron Devices  (Volume:40 ,  Issue: 1 )