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Browse Journals & Magazines > Proceedings of the IEEE ...> Volume:81 Issue:12 Help

GaAs-based heterojunction bipolar transistors for very high performance electronic circuits

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5 Author(s)
Asbeck, P.M. ; Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA ; Chang, F.M.-C. ; Wang, K.-C. ; Sullivan, G.J.
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This paper reviews the principles and status of AlGaAs/GaAs heterojunction bipolar transistor technology. Comparisons of this technology with Si bipolar transistor and GaAs field-effect transistor technologies are made. Epitaxial materials, fabrication processes, transistor DC and RF characteristics, and modeling of AlGaAs/GaAs HBT's are described. Key areas of HBT application are also highlighted

Published in:
Proceedings of the IEEE  (Volume:81 ,  Issue: 12 )

Date of Publication: Dec 1993

Page(s):
1709 - 1726
ISSN :
0018-9219
INSPEC Accession Number:
4616982
Digital Object Identifier :
10.1109/5.248960
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Dec 1993
Sponsored by :
IEEE

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