Referenced Items are not available for this document.
The decade of the 1990's is an opportune time for scientists and engineers to create cost-effective silicon “superchips” that merge silicon photonics with advanced silicon electronics on a silicon substrate. We can expect significant electrooptical devices from Column IV materials (Si, Ge, C and Sn) for a host of applications. The best devices will use strained-layer epitaxy, doped heterostructures, and bandgap engineering of quantum-confined structures. This paper reviews Si-based photonic components and optoelectronic integration techniques, both hybrid and monolithic
Published in:
Proceedings of the IEEE
(Volume:81
,
Issue:
12
)
Date of Publication: Dec 1993
- Page(s):
- 1687 - 1706
- ISSN :
- 0018-9219
- INSPEC Accession Number:
- 4616981
- Digital Object Identifier :
- 10.1109/5.248958
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Dec 1993
- Sponsored by :
- IEEE
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