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A study and optoelectronic verification of AlGaAs/GaAs heterojunction bipolar transistor large-signal characteristics

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3 Author(s)
Frankel, M.Y. ; Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA ; Pavlidis, D. ; Mourou, G.A.

A hybrid optoelectronic measurement system is constructed and used to obtain the large-signal characteristics of AlGaAs/GaAs heterojunction bipolar transistors. The measurement system utilizes a terahertz-bandwidth electrooptic transducer gated by 100-fs laser pulses to interrogate the time-domain waveforms at the device input and output nodes. A microwave signal phase-locked to the laser pulse-train is used to synchronously excite the device in both small-signal and large-signal regimes. The measurement system is capable of 50-GHz bandwidth and provides time-domain voltage waveforms that can be used directly to verify the time-domain results of the large-signal analysis

Published in:

Quantum Electronics, IEEE Journal of  (Volume:29 ,  Issue: 11 )

Date of Publication:

Nov 1993

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