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Quantum confined Stark effect in semiconductor quantum wells including valence band mixing and Coulomb effects

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2 Author(s)
Debernardi, P. ; CESPA, CNR, Torino, Italy ; Fasano, P.

A complete model for evaluating the electro-optic response of a semiconductor quantum well structure is presented. Heavy and light hole mixing in the valence band is included by using a variational technique to determine the basis states. The excitonic effects, which are clearly evident at room temperature in quantum well structures, arise from Coulomb interaction between the charged particles; the corresponding many body problem is treated in the framework of the second quantization approach, by writing the total Hamiltonian of the interacting electron-hole plasma. The electro-optic responses, for both TE (transverse electric) and TM (transverse magnetic) polarized light, are computed by summing up the contributions of all the different transitions; they show a good agreement with experimental results. Some examples of computed electro-optic spectra for GaAs/AlGaAs compounds are presented

Published in:

Quantum Electronics, IEEE Journal of  (Volume:29 ,  Issue: 11 )

Date of Publication:

Nov 1993

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