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1/f noise behavior in semiconductor laser degradation

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4 Author(s)
Fukuda, M. ; NTT Opto-Electron. Labs., Kanagawa, Japan ; Hirono, T. ; Kurosaki, T. ; Kano, F.

It is experimentally demonstrated that the increase in residual spectral linewidth during device degradation is due to an increase in 1/f noise in a multiple quantum-well (MQW) distributed-feedback (DFB) laser. The origin of 1/f noise and its influence on device characteristics is discussed and clarified by observing the degradation behavior of the spectral linewidth.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:5 ,  Issue: 10 )