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Quasi-three-dimensional modeling of bipolar transistor characteristics

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2 Author(s)
Sadovnikov, A. ; Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada ; Roulston, D.J.

A new approach to modeling the characteristics of a real three-dimensional bipolar transistor (BJT) is presented. It is based on the joint use of the BIPOLE program for calculating the intrinsic and emitter sidewall BJT characteristics and a special code RBCALC for calculating the two-dimensional potential distribution in the base region. The results presented show the importance of accounting for the third dimension for accurate calculation of some important BJT characteristics

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:12 ,  Issue: 11 )

Date of Publication:

Nov 1993

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