Quasi-three-dimensional modeling of bipolar transistor characteristics

A new approach to modeling the characteristics of a real three-dimensional bipolar transistor (BJT) is presented. It is based on the joint use of the BIPOLE program for calculating the intrinsic and emitter sidewall BJT characteristics and a special code RBCALC for calculating the two-dimensional potential distribution in the base region. The results presented show the importance of accounting for the third dimension for accurate calculation of some important BJT characteristics.<
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