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Algorithms for transient three-dimensional mixed-level circuit and device simulation

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3 Author(s)
Mayaram, K. ; Semicond. Process & Design Center, Texas Instrum. Inc., Dallas, TX, USA ; Jue-Hsien Chern ; Ping Yang, B.S.

Algorithms for transient mixed-level circuit and device simulation using a full two-carrier three-dimensional (3-D) device simulator SIERRA and the circuit simulator SPICE3 are presented. Circuit and device simulator coupling algorithms that are suited for two-dimensional mixed-level circuit and device simulation using direct solvers cannot be successfully employed when iterative solution techniques are used in 3-D device simulation. New algorithms to couple the circuit and 3-D device simulator have been developed and evaluated. The importance of 3-D mixed-level circuit and device simulation is demonstrated by applying it to single-event upset in CMOS SRAM cells

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:12 ,  Issue: 11 )

Date of Publication:

Nov 1993

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