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Modeling impact ionization in a BJT by means of spherical harmonics expansion of the Boltzmann transport equation

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3 Author(s)
Gnudi, A. ; Dept. of Electron., Bologna Univ., Italy ; Ventura, D. ; Baccarani, G.

A spherical-harmonics expansion method is used to find an approximate numerical solution of the Boltzmann transport equation (BTE) in a 1-D semiconductor device including acoustic and optical phonon, ionized impurity, and impact ionization scattering as well as a system of nonparabolic bands fitting the experimental density of states up to 2.6 eV. The method is applied to the simulation of a 1-D BJT and to the computation of the collector current multiplication factor. A comparison with experimental data is presented

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:12 ,  Issue: 11 )

Date of Publication:

Nov 1993

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