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12 GHz low-noise MMIC amplifier designed with a noise model-that scales with MODFET size and bias

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3 Author(s)
Hughes, B. ; Hewlett Packard, Santa Rosa, CA, USA ; Perdomo, I. ; Kondoh, H.

A scalable, bias-dependent FET noise model developed for monolithic microwave integrated circuit (MMIC) design is discussed. A three-stage, 12-GHz MMIC low-noise amplifier (LNA) designed with the model is described. The LNA has a 1.6-dB noise figure and 25.6-dB gain. Lumped elements were used to design an LNA that was significantly smaller per stage (0.31 mm/sup 2/) than previous MMIC LNAs.<>

Published in:

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1993. Digest of Papers., IEEE 1993

Date of Conference:

14-15 June 1993

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