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InP integrated circuit technology for microwave, digital, and optoelectronic applications

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2 Author(s)
L. E. Larson ; Hughes Res. Lab., Malibu, CA, USA ; J. J. Brown

The authors summarize the status of InP-based electronic and optoelectronic device and circuit technology, with particular emphasis on the performance and manufacturability of the technology. It is pointed out that InP-based electronic and optoelectronic device and circuit technology is maturing rapidly, due to active worldwide research in a number of areas. Epitaxial growth technology is capable of realizing a variety of AlInGaAsP alloys that exhibit useful electronic and optoelectronic properties. InP-based MODFETs have realized extrinsic f/sub T/'s of over 300 GHz and 60 GHz noise figures of under 1.0 dB. InP-based heterojunction bipolar transistors have demonstrated excellent digital and linear IC performance, with clock rates exceeding 35 GHz. Optoelectronic ICs have been demonstrated with speeds of 10 Gb/s.<>

Published in:

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE

Date of Conference:

4-7 Oct. 1997