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A two-dimensional analytical model of threshold voltages of short-channel MOSFETs with Gaussian-doped channels

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2 Author(s)
DasGupta, A. ; Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India ; Lahiri, S.K.

A two-dimensional analytical model for the threshold voltage of a short-channel MOSFET with a Gaussian-doped channel has been developed. The Gaussian profile has been simulated by a novel integrable function. This makes possible a purely analytical solution of the two-dimensional Poissons equation in the channel region of the MOSFET

Published in:

Electron Devices, IEEE Transactions on  (Volume:35 ,  Issue: 3 )

Date of Publication:

Mar 1988

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