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Large-area MOVPE growth for HEMT LSI

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5 Author(s)
T. Ohori ; Fujitsu Labs. Ltd., Atsugi, Japan ; N. Tomesakai ; M. Suzuki ; S. Notomi
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Reports on metalorganic vapor phase epitaxy (MOVPE) for high electron mobility transistor (HEMT) LSI. The low-pressure barrel reactor can grow twelve 3-inch wafers at a time. It is shown that the grown layers meet the demands for LSI application. The authors fabricated HEMT devices with gates 0.6 μm long using photolithography, with excellent characteristics. They applied the MOVPE technique to HEMT 64 Kb SRAM and obtained a typical address access time of 1.2 ns at a power dissipation of 5.9 W

Published in:

VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on

Date of Conference:

22-24 May 1991